Diamond single crystal and industrialization.

The development of large single crystal diamond is not enough for our country. Here consists of two aspects of content:

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Synthesis method of large particles diamond single crystal seed crystal; (2) the epitaxial growth method is adopted to develop large single crystal diamond. Synthesis method of large particles diamond single crystal seed crystal, although it has about 6 mm of big domestic single crystal, there are 10 mm or study plan, but it is rare in the market. While Japan's sumitomo corporation available synthetic diamond single crystal diamond tool adopted the larger particles.
Epitaxial growth method is used to develop large single crystal diamond, should cause our great attention. Some people think that the epitaxial growth cannot obtain diamond single crystal, but in natural crystal growth is a kind of phenomenon, starting with a lot of small crystal bud, grew up in a basement, crystal sprouts grow up step by step, gradually reduce the crystal quantity. We call this phenomenon "geometric elimination law", we can use this to explain the fact that may develop into single crystal diamond thin film.
Cubic boron nitride composite and its development of functional materials
The current domestic research and production of cubic boron nitride composite strength is quite weak, research institutes and universities are limited in several, is 1 ~ 2 production enterprises. The original thinking of cubic boron nitride should account for 25% ~ 30% of superhard material, after decades of development also accounted for only 5% ~ 5%, this is an unreasonable phenomenon. Not to mention its composite functional materials was developed.
A, cubic boron nitride composite sheet of restricted to henan an enterprise, its diameter is ф (30 ~ 35) mm, the technology will need to be further improved, especially the uniformity, stability, if can industrialization, as its development prospect will be considerable.
B, cubic boron nitride functional research domestic visible may simply be at jilin university. So far in the world with high temperature and high pressure method in laboratory under the condition of maximum size of the synthesis of cubic boron nitride single crystal is only 3 mm. Especially most of the growth of the crystal shape is irregular, unfit for device research applications. For this, the researchers conducted a functional device with high purity flake synthesis, cubic boron nitride single crystal is obtained nearly millimeter level surface with optical flatness, shape rules of high purity flake cubic boron nitride single crystal. As we have laid the foundation for the further study on its properties.
Cubic boron nitride crystal is a typical Ⅲ - V compound, its resistivity is 1010 Ω. Cm, 13 w/cm. The thermal conductivity K, can tolerate high temperature of 1200 ° C, and have the most wide direct band gap of 6.4 eV, so also is a kind of very important excellent semiconductor material, it in high temperature and high power broadband device microelectronics has a broad application prospect. Cubic boron nitride with sphalerite structure, belongs to the macroscopic symmetry F43m - Td group, also can have a second order nonlinear optical effect. It can be used to make optical higher harmonic generator, electro-optic modulator, visible and ultraviolet light converter, optical rectifier, optical parametric amplifier and so on. Cubic boron nitride as diamond still has a strong ability to resist radiation, to the preparation of radiation devices. Therefore, the preparation of cubic boron nitride materials research to the national economy in various fields, especially in the aerospace, military and other harsh environmental conditions application breakthrough device has important practical significance.
Due to the sheet, the synthesis of cubic boron nitride crystal provided can be used as the properties of crystal material, make us in the study of nature of cubic boron nitride is very apparent success. For example, with the development of lamellar cubic boron carbide, then can be obtained with diamond CVD method will cover up the ideal semiconductor devices. So the functional sex of the cubic boron nitride research becomes the more important!


From the above content, we have a lot of work needs to be done in superhard materials. We often say that the 21st century is the century of diamond, it is not only in the development and application of abrasive, more will be the development and utilization of functional. Our country has a good study atmosphere, with a large number of old and new combined with development of science and technology talents. We totally believe in the near future comprehensive catch up with and surpass the advanced world level.

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